Would love to see actual purchase-able devices compared against (for example) Ferroelectric RAM (FeRAM).
Right now, their numbers seem a bit too fantastic:
"100x lower switching energy than DRAM on the same node (1,000x lower than NAND)"
"expected to be capable of 1ns write operations, which is about 10x faster than DRAM"
Will probably lose some 0s on its way to commercialization. But 10^7 write/erase cycles would put it somewhere between regular flash & DRAM. Which would be very useful in terms of applications (like in-between cache for flash drives).
Would love to see actual purchase-able devices compared against (for example) Ferroelectric RAM (FeRAM).
Right now, their numbers seem a bit too fantastic:
"100x lower switching energy than DRAM on the same node (1,000x lower than NAND)"
"expected to be capable of 1ns write operations, which is about 10x faster than DRAM"
Will probably lose some 0s on its way to commercialization. But 10^7 write/erase cycles would put it somewhere between regular flash & DRAM. Which would be very useful in terms of applications (like in-between cache for flash drives).